Abstract
The optical pumping properties of strained In xGa 1−xAs/GaAs multiple-quantum-well structures, grown on (001) GaAs substrates have been measured at 4K using a tunable Ti-doped Sapphire laser. From the analysis of the dependence on the excitation energy, of both the degree of circular polarization and the PL intensity corresponding to quantum wells with different thickness or amounts of indium we can precise the nature (type I or type II) of the excitonic transition involving light-hole levels. A calculation using a model based on deformation potential and elasticity theories was used to fit the position of the various photoluminescence excitation peaks.
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