Abstract
A novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered. In addition to the independence between writing and reading paths, which offers a high reliability, the low resistive writing path performs high-speed, and energy-efficient WRITE operation. We compare the SOT-MTJ performances metrics with the spin transfer torque (STT)-MTJ. Based on accurate compact models, simulation results show an improvement, which attains 20× in terms of WRITE energy per bit cell. At the same writing current and supply voltage, the SOT-MTJ achieves a writing frequency 4× higher than the STT-MTJ.
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