Spin-orbit torque efficiency improved by BiSePt alloy

Abstract

In order to achieve high-efficiency spin-orbit torque devices, higher charge-spin conversion efficiency, and lower resistivity are required in the strong spin-orbit coupling layer that provides the spin current. In this work we prepare BiSePt alloy/Co heterostructures with in-plane magnetic anisotropy by magnetron sputtering deposition. The alloy layer is deposited via one of two procedures, either co-sputtering or alternative-sputtering. We study the BiSePt alloy samples and find that the spin orbit torque (SOT) efficiency decreases with the increase of Pt component, which is attributed to the change of topological order of Bi<sub>2</sub>Se<sub>3</sub> amorphous surface, caused by Pt doping. And the resistivity decreases with the increase of Pt component, which depends on the increase of metallic property. Due to the balance of these two competing mechanisms, the spin Hall conductivity of the alloy layer varies non-monotonically with the concentration ratio, and reach an optimal value at a ratio of 67% of Bi<sub>2</sub>Se<sub>3</sub> component. With the increase of the Bi<sub>2</sub>Se<sub>3</sub> component, the SOT efficiency, electrical resistivity and spin Hall conductance of the alloy layer show different trends. At about 20%–70%, they increase/decrease tardily. At about 70%–100%, the resistivity ascends more prominently than the SOT efficiency, which leads the spin Hall conductance to decrease. Comparing with using the co-sputtering deposition, the electrical conductivity and spin Hall angle of the alloy layer obtained using alternating sputtering deposition are small, which is attributed to the enhancing of interfacial scattering and the filter effect of Pt on the spin flow. In contrast to traditional pure heavy metal materials (such as Pt, Ta) and topological insulator materials like Bi<sub>2</sub>Se<sub>3</sub>, our BiSePt alloy devices obtained by co-sputtering deposition achieve industry-matched preparation conditions, greater SOT efficiency, and considerable electrical conductivity of the alloy layer, thus making further applications of SOT devices possible.