Abstract

We investigate theoretically the effect of a time dependent oscillating potential on the transport property of the Dirac Fermion through a monolayer graphene electrostatic barrier under the influence of the Rashba spin orbit interaction. The time dependent problem is solved in the frame work of the non-perturbative Floquet approach. It is noted that the dynamic condition of the barrier may be controlled by tuning the Rashba parameter. Introduction of the spin orbit interaction causes splitting of the Fano resonance (FR), a characteristic feature in photon assisted tunneling. The separation between the spin split FR's gives an indirect measure of the fine structure of the quasi-hole bound state inside the barrier. The present findings on the Rashba splitting of the FR and its external control by tuning the oscillating field parameters might have potential for applications in spintronic devices, especially in the spin field effect transistors. The spin polarization of different Floquet sidebands is found to be quite sensitive to the spin-pseudospin interaction.

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