Abstract
Theory of weak localization in two-dimensional high-mobility semiconductor systems is developed with allowance for the spin–orbit interaction. The obtained expressions for anomalous magnetoresistance are valid in the whole range of classically weak magnetic fields and for arbitrary strengths of bulk and structural inversion asymmetry contributions to the spin splitting. The theory serves for both diffusive and ballistic regimes of electron propagation taking into account coherent backscattering and nonbackscattering processes. The transition between weak localization and antilocalization regimes is analyzed. The manifestation of the mutual compensation of Rashba and Dresselhaus spin splittings in magnetoresistance is discussed. A perfect description of experimental data on anomalous magnetoresistance in high-mobility heterostructures is demonstrated. The in-plane magnetic-field dependence of the conductivity caused by an interplay of the spin–orbit splittings and Zeeman effect is described theoretically.
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