Spin-optoelectronic devices based on hybrid organic-inorganic trihalide perovskites

Jingying Wang,Z Valy Vardeny,Dmitry Semenov,Xiaojie Liu,Vikram V Deshpande,Ryan Mclaughlin,Yaxin Zhai,Dali Sun,Haoliang Liu,Hangwen Guo,Shai R Vardeny,Ryuichi Tsuchikawa,Chuang Zhang,Stephen Mcgill

doi:10.1038/s41467-018-07952-x

Abstract

Recently the hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. However, their spin characteristic properties have not been fully studied, although due to the relatively large spin-orbit coupling these materials may show great promise for spintronic applications. Here we demonstrate spin-polarized carrier injection into methylammonium lead bromide films from metallic ferromagnetic electrodes in two spintronic-based devices: a ‘spin light emitting diode’ that results in circularly polarized electroluminescence emission; and a ‘vertical spin valve’ that shows giant magnetoresistance. In addition, we also apply a magnetic field perpendicular to the injected spins orientation for measuring the ‘Hanle effect’, from which we obtain a relatively long spin lifetime for the electrically injected carriers. Our measurements initiate the field of hybrid perovskites spin-related optoelectronic applications.

Highlights

The hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices
The recently obtained Rashba-splitting in the OITP4,5, the optical spin selection rules[6,7], and magnetic field effect[8] caused by strong spin–orbit coupling (SOC) have initiated spintronics research avenue for these compounds
We demonstrate electrical spin injection into organic–inorganic trihalide perovskites (OITP) using spin valve (SV) devices based on MAPbBr3 interlayer, where giant magneto-resistance (GMR) of up to about 25% has been achieved

Summary

Introduction

The hybrid organic-inorganic trihalide perovskites have shown remarkable performance as active layers in photovoltaic and other optoelectronic devices. In order to realize spin-related optoelectronic devices based on OITP, electrical spin injection from ferromagnet (FM) electrodes into OITP films should be demonstrated. We have used the circularly polarized electroluminescence (EL) emission from MAPbBr3 film in a spin light emitting diode (spin-LED) device based on a FM electrode.

Results

Conclusion