Spin-on Gate Dielectric Materials for Next Generation Display Systems

Abstract

ABSTRACTWe present recent advances on spin-on polymers as gate dielectric for thin film transistors. We have developed film type I with significantly improved dielectric properties. At a curing temperature of 250 °C, the dielectric constant is 3.46, the breakdown voltage is 4.10 MV/cm at 1 μA/cm2, the leakage current is 4.9 × 10−8 A/cm2 at 2.5 MV/cm, and the CV hysteresis is 3.4 V. At a curing temperature of 425 °C, the dielectric constant, the breakdown voltage, the leakage current, and the CV hysteresis are 3.2, 4.73 MV/cm, 2.6 × 10−8 A/cm2, and 0.44 V respectively.