Abstract
We report the clearly observed tunneling magnetoresistance at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom ferromagnetic electrode and Co as a top ferromagnetic electrode prepared by pulsed laser deposition. Spin-polarized electrons were injected from Co-doped ZnO to the crystallized Al2O3 and tunnelled through the amorphous Al2O3 barrier. Our studies demonstrate the spin polarization in Co-doped ZnO and its possible application in future ZnO-based spintronics devices.
Highlights
Spintronics is related to the manipulation of spins
Magnetoresistance changes in n-type conducting, magnetic ZnO films with different magnetic species and concentrations of free charge carriers have been systematically investigated as a function of an external magnetic field with regard to future applications in magnetoresistive ZnO-based spintronics devices
Insulating and n-type conducting, diluted magnetic ZnO films have been prepared by pulsed laser deposition and the electric and magnetic controllability of magnetoresistance has been demonstrated
Summary
Spintronics is related to the manipulation of spins. It mainly consists of three processes, spin generation, spin transportation, and spin detection. Magnetoresistance changes in n-type conducting, magnetic ZnO films with different magnetic species and concentrations of free charge carriers have been systematically investigated as a function of an external magnetic field with regard to future applications in magnetoresistive ZnO-based spintronics devices. In this paper we will focus on the spinsplitting of the conduction band due to sd-exchange interaction between free charge carriers and localized magnetic moments, the electrically controllable magnetoresistance and magnetically controllable spin polarization in Co-doped ZnO thin films, Schottky diodes and magnetic tunnel junctions, respectively.
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