Abstract
We analyze the electrical injection of spin-polarized electrons into a (GaIn)As∕GaAs light-emitting diode. Using an Fe∕Tb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we demonstrate spin injection even in remanence between 90 and 260K. The maximum degree of circular polarization of the emitted light is 0.75% at 90K.
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