Abstract
The spin injection efficiency in the Ferromagnetic/Nonmagnetic Semiconductor/Ferromagnetic (FM/NMS/FM) structures was studied under external magnetic and electric fields. It is found that spin injection efficiency can be strongly influenced by magnetic and electric fields. With the increase of these fields, the down-stream spin diffusion length increases and makes the spin injection efficiency increase. Furthermore, the effects of many-body correlations and exchange reduces the value of the diffusion constant that leads to enhance spin injection efficiency.
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