Abstract
We report on the successful spin injection from EuS/Co multilayers into (100) GaAs at low temperatures. The spin injection was verified by means of polarized electroluminescence (EL) emitted from AlGaAs/GaAs-based spin-light-emitting diodes in zero external magnetic field. Spin-polarized electrons were injected from prototype EuS/Co spin injector multilayers. The use of semiconducting and ferromagnetic EuS circumvents the impedance mismatch. The EL was measured in side emission with and without an external magnetic field. A circular polarization of 5% at 8 K and 0 T was observed. In view of the rather rough interface between the GaAs substrate and first EuS layer, improvement of the interface quality is expected to considerably enhance the injected electron spin polarization.
Highlights
A MAJOR working field in spintronics covers efficient spin injection and transport in spintronic devices [1]–[6]
All samples were tested for EL at low temperature (8 K) and prior to each measurement, their I –V curves were recorded
EL measurements were conducted at low temperature and room temperature (RT) in side-wall emission
Summary
A MAJOR working field in spintronics covers efficient spin injection and transport in spintronic devices [1]–[6]. The straightforward approach of growing a magnetic layer on top of a semiconductor yields only an insignificantly small degree of spin polarization in the injected current [7], [8] The reason for this was found in the mismatch of conductivities between metals and semiconductors which differ by a few orders of magnitude [9], [10]. EuS is an intrinsic ferromagnetic semiconductor with a bandgap of 1.6 eV, a magnetic moment of 7 μB, and a Curie temperature (TC) of 16.5 K [17] This is a considerable drawback for this material as it would otherwise be an ideal candidate for creating spin-polarized currents. The main objective using this system is to achieve efficient spin injection at RT
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