Abstract
The spin injection efficiencies in epitaxial Co2MnSi (CMS)/Pt thin films were investigated in spin pumping configuration. The inverse spin Hall (effect) voltage significantly depends on the post-annealing temperature Ta of CMS, which shows one order larger values than those of Fe and CoFe at Ta = 400 °C. The effective spin mixing conductance derived by the analytical model reaches 6.5 × 1019 m−2. Our findings suggest that the Co-based Heusler alloys could be promising material candidates as the spin injection source with spin pumping.
Highlights
The inverse spin Hall effect (ISHE) voltage in Co2MnSi annealed at this optimized temperature was one order larger than that in Fe and CoFe
(111) CMS peaks that the in-plane rotated relation i6tsh0eM0a○gnCOn.2e[51al1Ti0nh]ge/CpsrMaotucSer[sa1st0ia0on]ndfmosraatsguanrmaettpeizldeasatibwoonivtheMTTsaao==f 4C40M000○S○CCi.n,Tc5rhe0ea0Ms○eCds v,aaafltnueder was 800 kA/m, the value of which is close to the bulk value of 1040
Scitation.org/journal/adv that the anisotropic magnetoresistance (AMR) or spin Hall magnetoresistance (SMR) contributions to the voltage spectrum can be neglected in this magnetic field configuration.[28]
Summary
The ISHE voltage in Co2MnSi annealed at this optimized temperature was one order larger than that in Fe and CoFe. The 2.5–3.5 times larger effective spin mixing conductance ge↑f↓f values as compared with CoFe samples were estimated from the experimental results. Scitation.org/journal/adv that the anisotropic magnetoresistance (AMR) or spin Hall magnetoresistance (SMR) contributions to the voltage spectrum can be neglected in this magnetic field configuration.[28] For the Ta = 600 ○C sample, the signal was degraded the degree of L21 ordering should be better than Ta = 400 ○C and 500 ○C samples.
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