Abstract
We report the fabrication and magnetoresistance (MR) of the La0.67Sr0.33MnO3/C60/Co spin valves. The introduction of 1.5nm AlOx barrier between the C60 layer and cobalt top electrode prevents effectively interfacial diffusion and Co penetration, and thus an appreciable positive MR (as large as 3.65%) at room temperature was exhibited for the devices in the thickness range (5–40nm) of C60 studied. Possible mechanisms on the MR polarity are proposed. Furthermore, based on the temperature- and thickness- dependent MR and I–V characteristics, we have obtained clear evidences that the MR of C60-based spin-valves originates from the tunneling of spin-polarized electrons at the low thickness of C60, however at the larger thickness (>20nm) the electrons are injected into and subsequently hopping transport within the C60 spacer.
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