Abstract
Spin injection and detection properties in Co50Fe50/AlOx/SOI (Si on insulator) junctions were investigated by using Hanle effect measurements up to room temperature. Cross-sectional transmission electron microscope images and Fourier transform images of the Co50Fe50/AlOx/SOI junction, fabricated by using appropriate oxidation condition, indicate the AlOx layer became single-crystal-like and spin injection and detection were realized at room temperature. In contrast, in junction fabricated by using excess oxidation condition, AlOx layer became poly-crystal-like and spin injection was not realized though spin injection was realized below 150 K. These results indicate that appropriate oxidation is essential to fabricate AlOx tunnel barrier with good crystallinity and realize spin injection and detection at room temperature.
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