Abstract
We examine room temperature current-voltage (IV) characteristics of $\mathrm{CoFeB}\phantom{\rule{0.16em}{0ex}}|\phantom{\rule{0.16em}{0ex}}\mathrm{MgO}\phantom{\rule{0.16em}{0ex}}|\phantom{\rule{0.16em}{0ex}}\mathrm{CoFeB}$ type of perpendicularly magnetized tunnel junctions developed for memory applications. From their nonlinear bias voltage dependence, a conductance ``cross-scaling'' is seen that is consistent with the involvement of inelastic spin-flip scattering in electrodes. A phenomenological model is constructed that connects the parameters of spin-flip scatter-related inelastic events with both magnetoresistance and spin-transfer torque. The model provides measurable, electrode-specific properties such as interface exchange stiffness as it affects spin-torque performance.
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