Abstract
We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1- x Mnx Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
