Abstract
We investigate possible spin-dependent resonant tunneling through double-barrier electromagnetic structure. We point out that previous related studies contain serious errors in the calculation and the correct ones show much reduced spin polarization in the tunneling. In this study, we show that the significant amount of spin polarization with nice resonant structures can be achieved by applying a proper electric field subject to the given magnetic barriers. The electric potential U, which is crucial in our model, is chosen to exactly cancel the A2 term originated from the applied magnetic field. In this way, we can remove unwanted obstacles and expedite the tunneling of electrons.
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