Abstract
We theoretically investigated the electron-spin transport properties of an antiparallel double \(\updelta \)-magnetic-barrier nanostructure modulated by spin–orbit coupling (SOC), which could be fabricated experimentally by depositing two ferromagnetic stripes with horizontal magnetization on the top and bottom of an InAs/Al\(_{x}\)In\(_{1-x}\)As semiconductor heterostructure. Both Rashba and Dresselhaus SOCs were taken into account, and the transmission coefficient, conductance, and spin polarization calculated analytically by means of the improved transfer matrix method. The electron-spin transport through this nanosystem is found to be strongly dependent on the SOC. The electron-spin polarization is also found to vary with the strength of the SOC, potentially enabling tunable spin filters for use in spintronic applications.
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