Abstract
Ferromagnetic semiconductor La 2NiMnO 6 was used as a barrier in a tunneling junction. The junction with a ferromagnetic electrode showed magnetoresistance (MR) of −0.12% at 150 K associated with the relative orientation of magnetization of the ferromagnetic layers. The result is interpreted as a spin-filtering effect, which is caused by the spin-dependent barrier height of the ferromagnetic tunneling barrier.
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