Abstract
A systematic study is carried out on the spin-filter (SF) tunneling magnetoresistance (TMR) occurring in a ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal (FM/FI/FM) tunnel junction. The theoretical investigation gives a unified and compact description on the SF and TMR effects in this structure, and qualitatively explains the relevant experiments in this area. Specifically, due to the strong SF effect, the TMR can be separately controlled by the extended Slonczewski's polarization factors, leading to both the barrier-height and bias-voltage induced sign-change behavior. It is also proved that this structure can provide a positively or negatively large and stable TMR, which does not vary appreciably with increasing the bias. These features are very prominent compared with an FM/I/FM conventional magnetic tunnel junction and are believed to be of practical use in designing spintronic devices.
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