Abstract
Spin-polarized currents are investigated in symmetric (asymmetric) resonant magnetic tunnel junctions (S- (A)-RMTJs) including a non-magnetic metal (NM) layer. Charge-diode and spin-diode features are found for the S-RMTJs at definite thicknesses of MgO and NM layers. Owing to the presence of quantum-well states, a full spin polarization can be achieved by proper choice of the thickness of NM layer. The charge and spin currents have increased for the A-RMTJs in comparison to those of the S-RMTJs due to different properties of ferromagnetic electrodes. The present study suggests new spin-filter devices to use in the spintronics field.
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