Abstract
We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.
Highlights
Resonant tunneling diodes (RTDs) are interesting devices for spintronics because the spin character of the carriers can be voltage selected [1,2,3,4]
Our experimental results are explained by the tunneling of minority carriers into the quantum well (QW), carrier capture into the InAs quantum dots (QDs), carrier accumulation in the QW region, and partial thermalization of minority carriers
Under laser excitation, photogenerated holes tunnel through the QW and can be captured by the QDs and eventually recombine radiatively
Summary
Resonant tunneling diodes (RTDs) are interesting devices for spintronics because the spin character of the carriers can be voltage selected [1,2,3,4]. The spin-dependent carrier transport along the structure was investigated by measuring the leftand right-circularly polarized photoluminescence (PL) intensities from InAs QD and GaAs contact layers as a function of the applied voltage, laser intensity and magnetic fields up to 15 T.
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