Abstract
We present new aspects on the spin dynamics of carriers and excitons in semiconductor heterostructures. In doped wells, we show that the two spin components of an optically created two-dimensional electron gas are well described by Fermi-Dirac distributions with a common temperature but different chemical potentials. In intrinsic wells, where excitonic effects dominate the optical properties, we show that exciton–exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors, which can be tuned by the application of an external electric field.
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