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Abstract
The spin dephasing time ${T}_{2}$ of electrons in a very dirty metal is calculated. The dephasing is due to weak scattering processes which do not conserve the total electron spin. Two scattering processes which are of particular importance in the impurity band of many-valley semiconductors are considered: nuclear spin flip and intervalley spin orbit. The diffusive nature of the electron motion enhances the spin dephasing rate over the usual rate present in clean metals. Electron-electron interactions are shown to have strong effects upon this diffusive process and lead to an enhanced dephasing rate. To lowest order in the interactions this enhancement is proportional to the enhancement of the spin susceptibility. Quantitative comparison is made with experiments in phosphorus-doped silicon.
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