Abstract
Spin dependent tunneling (SDT) devices have been fabricated using standard photolithographic techniques. The SDT film was RF sputtered NiFeCo(125 /spl Aring/)/Al/sub 2/O/sub 3/(20 /spl Aring/)/CoFe. Device resistances ranged from 1 K/spl Omega/ to 12.9 K/spl Omega/ for device areas of 1000 /spl mu/m/sup 2/ (10 /spl mu/m X 100 /spl mu/m) to 84.5 /spl mu/m/sup 2/ (6.5 /spl mu/m X 13 /spl mu/m), respectively. Peak GMR was over 4% at low bias with saturation fields around 10 Oe. Hard layer switching fields were about 50 Oe. Memory operation was demonstrated using integrated metallization for supplying read/write fields.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
