Abstract
We have examined the spin-dependent tunneling properties of ferromagnetic double tunnel junctions with a nano-granular ferromagnetic intermediate layer, whose average grain size is about 2 nm. At low temperatures, samples show a linear current–voltage characteristic at low voltages, which indicate elastic coherent tunneling. In this regime, the conductances for both parallel and anti-parallel configurations of the magnetizations of the grains fluctuate to the applied bias voltage, with spin-dependent periods. The tunnel magnetoresistance ratio can be as large as 100%. We can conclude that we have observed a spin-dependent single electron tunneling via a single discrete level for the first time in a metallic system.
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