Spin-dependent resonant tunneling through 6μm diameter double barrier resonant tunneling diode

Abstract

A vertical resonant tunneling diode based on the paramagnetic Zn1−x−yMnyCdxSe system has been fabricated with a pillar diameter down to ∼6μm. The diode exhibits high quality resonant tunneling characteristics through the electron subband of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green’s function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.