Abstract
We study the edge-channel transport at quantum Hall (QH) transition regions for a high-mobility $\mathrm{Si}∕\mathrm{Si}\mathrm{Ge}$ QH conductor by measuring nonlocal resistance $({R}_{\mathrm{NL}})$. The ${R}_{\mathrm{NL}}$ as a function of magnetic field changes drastically after Landau-level crossings. The features of the ${R}_{\mathrm{NL}}$ depend on the spin configuration between the innermost edge channel and the bulk state: the ${R}_{\mathrm{NL}}$ appears only when the relevant edge-bulk states have opposite spin orientations. Also, an origin of the spin-dependent resistivity [Phys. Rev. Lett. 94, 176402 (2005)] at QH transition regions is discussed in terms of the spin-dependent inter-edge-bulk scattering.
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