Abstract
We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of $$10^{4}\%$$ at 10 K and saturates at $$\sim 0.5\,\hbox {kOe}$$ , showing dual functionality—working as a magnetic diode as well as a magnetoresistive element.
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