Abstract
Optically detected magnetic resonance (ODMR) observed on the 0.84eV Cr-related emission in semi-insulating GaAs:Cr implies that the excited state associated with this internal transition of the axial Cr 2+-X centre is formed by the spin dependent free carrier capture process: Cr 3+-X + e CB a ̊ Cr 2+-X ∗ The results imply that the luminescence is not due to the presence of Cr 2+-X ground state centres in the material as previously assumed. A competing charge transfer process, possibly involving Cr 2+-X , is observed as a quenching ODMR signal on the 0.84eV luminescence.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
