Abstract
We report on the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By nonequally populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down, while the inter-edge-channel scattering is strongly promoted as the spin orientations of both the relevant edge channels are switched to spin-down. The evident spin dependence of the adiabatic edge-channel transport originates from a weak spin-orbit interaction in silicon-based two-dimensional electron systems. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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