Abstract
In this paper, for the first time in our knowledge, the influence of nonuniform and continuous doping in semiconductor on amplification of spin polarization current especially in n-type GaAs semiconductor have been studied. Numerical calculations based on a selfconsistent solution of the continuity equation, the Poisson equation and rate-equation are used to explain the amplification of spin polarization density. The influences of the diffusion coefficient (Dn) and relaxation time (τsf) on the spin polarization density are also studied. The amplifying effect of nonuniform doping on spin polarization density is important because it might have many applications in spintronic devices.
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