Spin-coated Ge–Se–Te–Si 3N 4–CdS chalconitride thin film

Abstract

Ge–Se–Te–Si 3N 4–CdS chalconitride glass thin films have been prepared by spin coating from a solution of n-propylamine. The prepared films were heated at temperatures ranging from 80 to 250 °C. The n-propylamine organic solvent disappeared entirely at 200 °C and the resulting film thickness was approximately 650 nm. The effects of heating temperature on the chemical bonding state of the thin films were investigated by means of Fourier-transform infrared spectroscopy (FT-IR) analysis, the organic group peaks nearly disappeared in the range 200–250 °C. X-ray diffraction (XRD) result shows that the crystalline phase does not appear with heat treatment up to 200 °C.