Spin centres on clean germanium and silicon surfaces and their interaction with adsorbed molecules

Abstract

AbstractThe nature of surface states on clean Ge and Si surfaces is discussed. New experimental data about the interaction of different acceptor molecules with clean Ge and Si surfaces are presented. New paramagnetic adsorption centres are detected by the EPR method. The characteristic feature of the EPR signal detected is a superfine splitting on the 29Si nuclei. This result shows that the unpaired electron in paramagnetic complexes formed by adsorption are largely drawn into the Si atoms. The initial heats of O2 adsorption on clean Ge and Si surfaces, measured by calorimetric method, confirm the dissociative character of the first stages of oxidation and double bond formation.