Spin and phase coherence measured by antilocalization inn-InSbthin films

Abstract

The spin and phase coherence times of the itinerant electrons in $n\text{-InSb}$ thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in $n$-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.