Abstract
We theoretically studied spin accumulation and mistracking effects on the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-contact which is experimentally fabricated as current-confined-path structure made in a nano-oxide layer between ferromagnetic metal layers. We calculated the magnetoresistance (MR) ratio by evaluating the voltage drop due to the spin accumulation and additional resistivity due to mistracking. We showed that both the spin accumulation and mistracking give the same order of magnitude to the MR ratio for the nano-contact with 2 nm diameter.
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