Abstract
We have investigated the ion-beam mixing of 1.2 nm thin Sb-markers in an 80 nm Ni matrix (and of similar Ni-markers in Sb), by irradiating them at 77 K with 40–450 keV singly charged Ne, Ar, Kr, Xe and Pb ions at fluences of up to 6 × 10 15/cm 2. Below a critical value of the deposited energy density, F D cr ≈ 0.35−0.7 keV/nm, the mixing rate k was found to scale linearly with F D. The deduced mixing efficiency of k F D = 2.6(3) nm 5 keV for the Ni-marker in Sb is consistent with local spike formation in Sb. The much smaller mixing efficiency for the Sb-marker in Ni, k F D = 0.10(1) nm 5 keV , can be explained by either purely ballistic or local spike mixing.
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