Abstract
An extended version of MOSFET RAD SPICE model providing combined account for aging and total dose effects is described. The model uses summation of radiation induced (depending on dose rate, irradiation time, electrical bias) oxide and interface traps densities and interface densities produced by hot electrons to calculate MOSFET characteristics. The model was built using macromodeling approach, standard SPICE models for MOSFETs (BSIMSOI or EKV) and model parameters dependences on electrical stress and total dose irradiation factors. The developed model accounts for enhanced degradation due to combined TID and electrical stress conditions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
