SPICE-Based Performance Analysis of Trigate Silicon Nanowire CMOS Circuits

Abstract

An ultralow-voltage performance is investigated in nanowire transistors (NW Tr.) CMOS circuits. SPICE model parameters of BSIM4 are extracted from measurement data of NW Tr. fabricated on 300-mm SOI wafer. The delay time and the power consumption are examined between nanowire and bulk-Si CMOS circuits. The operation voltage of a nanowire CMOS inverter with an ideal subthreshold slope can be reduced by 300 mV from that of the bulk-Si CMOS inverter. NW-Tr.-based circuits under voltage scaling have immunity from supplying voltage fluctuation and suppression of operation delay variation.