Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 1.9 µm.

Abstract

We report a study of the response function parameters (amplitude and rise/fall time) of a high-speed GaSb/GaInAsSb/GaAlAsSb photodiode operating at 1.9 µm as a function of optical input power and reverse bias voltage. The experimental measurement results yield the optimal pulse energy and optimal reverse bias voltage for the photodiode. The 44 ps minimal rise time of the response function and 3.6 GHz bandwidth are achieved under a 3 V reverse bias voltage and pulse energy in the 0.27-2.5 pJ range.