Speed and sensitivity limitations of optoelectronic receivers based on MSM photodiode and millimeter-wave HBTs on InP substrate

Abstract

Heterostructure bipolar transistors and MSM photodetectors based on compound semiconductors have demonstrated high-frequency performance beyond 100 GHz. By combining these state-of-the-art devices in a realistic integrated optoelectronic receiver, this letter demonstrates that it is possible to achieve a receiver sensitivity of -19.04 dBm at 16 Gb/s at a bit-error-rate of 10/sup -9/. Further improvement of noise and bit-rate can be achieved by designing HBTs with lower junction capacitances. >