Speed advantage of deep sub-micron BiNMOS gate over CMOS at liquid nitrogen temperature

Abstract

A high switching performance at liquid-nitrogen temperature of deep submicron BiNMOS (cryo-BNiNMOS) is demonstrated with Si HOMO base bipolar junction transistors (BJTs). The high cut-off frequency (10.3 GHz), sufficient current gain (25), and low base resistance (2.7 k Omega / Square Operator ) for cryo-BiNMOS were simultaneously obtained even in Si HOMO base BJTs by the heavily doped base AND collector. Using these measured device data, it has been clarified by SPICE simulation that in the switching performance the cryo-BiNMOS gate has an advantage over cryo-CMOS, even when the power supply voltage is below 2.5 V. >