Abstract
We present a temperature- and field-dependent Raman scattering study of the “metal-semiconductor” transitions in SmB 6 and EuB 6. Below a characteristic temperature T ∗ ∼ 50 K , the Raman scattering spectrum of SmB 6 is characterized by (i) an abrupt redistribution of electronic scattering intensity across a temperature-independent energy, Δ c, reflecting the opening of a pseudo-gap, and (ii) the appearance of several in-gap resonances which appear to be crystal-electric-field transitions of the Sm 3+ ion which are split by local lattice distortions. By contrast, the metal-semiconductor (MS) transition in EuB 6 manifests itself as a change from a diffusive electronic scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic metal phase which is characteristic of a strongly-correlated metal. Most interesting is evidence that the MS transition in EuB 6 is precipitated by the formation of bound magnetic polarons.
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