Abstract
We consider the appearance of a new type of electronic excitation in heterostructures with semiconductor and dielectric quantum dots: excitons formed by spatially separated electrons and holes. We have observed the effect of a substantial increase in the binding energy of such an exciton (the hole moves within the quantum dot, while the electron is localized above the spherical surface of the quantum dot–matrix interface) in nanosystems containing semiconductor and dielectric quantum dots, compared with the binding energy of an exciton in semiconductor and dielectric single crystals.
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