Spectroscopy of excitons bound to isoelectronic defect complexes in silicon

Abstract

A review is given of the axial isoelectronic bound exciton centres of current interest in silicon. A simple model is presented for the energy level structures of the bound excitons in which the axial nature of the optical centres is represented by an internal unlaxial stress acting on the band extrema of perfect silicon. This description is shown to provide a useful parameterisation of unlaxial stress and Zeeman data and to account for the relative transition probabilities of the various energy states.