Abstract
Photothermal ionization spectroscopy has been used to determine the residual donor species present and their relative concentrations in the highest purity molecular beam epitaxial (MBE) n-GaAs yet reported. Data are presented for samples grown in two different MBE growth reactors: one using elemental As and the other using cracked AsH3 as the arsenic source. In spite of the substantial differences between growth systems, the donor backgrounds are quite similar.
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