Abstract
Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.
Highlights
CdS and Cu2S compounds are of great interest owing to their unique properties in variation of the stoichiometric composition, due to nanocrystal morphology, valence states and their potential applications in numerous fields [1,2]
To evaluate an impact of traps on parameters of substrate CdS layers, spectra of deep traps have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by probing of the DC photocurrent changes [14]
The blocking junction of Cu2S-CdS for the majority carriers has been qualitatively tested by varying the polarity of the applied voltage and by measurements of pulsed barrier charging current transients induced by linearly increasing voltage (BELIV- [16,17])
Summary
CdS and Cu2S compounds are of great interest owing to their unique properties in variation of the stoichiometric composition, due to nanocrystal morphology, valence states and their potential applications in numerous fields [1,2]. Materials 2012, 5 technological applications—much research interest comprises the possible applications of CdS in fabrication of various optoelectronic devices [5] based on CdS polycrystalline films, which are obtained by various methods Several techniques, such as solid state reactions (dry processing) [6], vacuum evaporation [7], sputtering [8], spray pyrolysis [9] and sulfurization of Cu films [10] have been applied for the production of Cu2S films on CdS substrate. The heterostructures were formed by employing a substitution technique when a layer of copper sulfide is formed directly on the substrate layer of CdS during heat treatment using a pre-printed copper chloride film formed by evaporation in vacuum This technology is promising due to low cost, easy processibility, the possibility of large area fabrication together with satisfactory structure quality. To evaluate an impact of traps on parameters of substrate CdS layers, spectra of deep traps have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by probing of the DC photocurrent changes [14]
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