Abstract
The properties of bound and free holes in p-type ZnSe layers were investigated with Raman spectroscopy. The layers were grown on GaAs substrates and doped in situ with Li acceptors by molecular beam epitaxy. Below 100 K the holes are bound in the neighborhood of the acceptors. Hole transitions between lhe localized hydrogen like S and P states of the Li acceptors and from these states to delocalized valence band states are seen with electronic Raman scattering. The strength of these transitions depends linearly on the net acceptor concentration. Above 100 K the holes populate the valence band. The presence of a free hole gas and its coupling with the longitudinal optical phonons is established from the behavior of the first order Raman spectra. The concentration and mobility of the free holes are extracted from line shape analysis.
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