Abstract
μSR under pulsed laser excitation has been developed at KEK-MSL. By applying this powerful new technique to the muonium states in non-doped GaAs, the following main results were obtained: (1) For the first time direct evidence was obtained for secondary propagation of the local excitation into the bulk by the photon recycling mechanism. (2) Muonium located around the Ga–As bond center is highly sensitive to the charge-cycling process, which means that we have established that it behaves as a recombination center. (3) On the other hand, muonium at the Ga tetrahedral center does not interact with photo-excited carriers at all. These results open wide the possibility to study muonium electronic structure and its dynamics in various types of semiconductors under time-differential photo-excitation.
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