Abstract
AbstractWe have performed micro‐photoluminescence (μ‐PL) spectroscopy and imaging of single GaAs/InGaAs/GaAs nanowires (NWs) grown by selective‐area metalorganic vapor phase epitaxy (SA‐MOVPE) on masked GaAs (111)B substrates. Strong emission was observed from both end of the NW dispersed on a Si substrate. Measurements of excitation power dependence and two types of spatially‐ and spectrally‐resolved image revealed that those emissions, located around 1.40 and 1.44 eV, were from InGaAs quantum well embedded in the GaAs NW, and were suggested to be from different region. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
